Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature. (C) 2013 The Japan Society of Applied Physics


Published in:
Japanese Journal Of Applied Physics, 52, 8, 08JC01-1
Year:
2013
Publisher:
Bristol, Japan Society of Applied Physics
ISSN:
0021-4922
Laboratories:




 Record created 2013-10-01, last modified 2018-09-13

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