000188946 001__ 188946
000188946 005__ 20190316235715.0
000188946 0247_ $$2doi$$a10.1063/1.4812334
000188946 022__ $$a0003-6951
000188946 02470 $$2ISI$$a000321145200022
000188946 037__ $$aARTICLE
000188946 245__ $$aEffects of surface oxide formation on germanium nanowire band-edge photoluminescence
000188946 269__ $$a2013
000188946 260__ $$bAmerican Institute of Physics$$c2013$$aMelville
000188946 300__ $$a5
000188946 336__ $$aJournal Articles
000188946 520__ $$aThe effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface. (C) 2013 AIP Publishing LLC.
000188946 700__ $$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA$$aHashemi, Fatemeh Sadat Minaye
000188946 700__ $$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA$$aThombare, Shruti
000188946 700__ $$0243742$$g182447$$aFontcuberta I. Morral, Anna
000188946 700__ $$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA$$aBrongersma, Mark L.
000188946 700__ $$aMcintyre, Paul C.
000188946 773__ $$j102$$tApplied Physics Letters$$k25
000188946 8564_ $$uhttps://infoscience.epfl.ch/record/188946/files/HashemiAPL2013.pdf$$zn/a$$s2152916$$yn/a
000188946 909C0 $$xU11832$$0252277$$pLMSC
000188946 909CO $$qGLOBAL_SET$$pSTI$$ooai:infoscience.tind.io:188946$$particle
000188946 917Z8 $$x182447
000188946 937__ $$aEPFL-ARTICLE-188946
000188946 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000188946 980__ $$aARTICLE