000188946 001__ 188946
000188946 005__ 20181203023241.0
000188946 0247_ $$2doi$$a10.1063/1.4812334
000188946 022__ $$a0003-6951
000188946 02470 $$2ISI$$a000321145200022
000188946 037__ $$aARTICLE
000188946 245__ $$aEffects of surface oxide formation on germanium nanowire band-edge photoluminescence
000188946 269__ $$a2013
000188946 260__ $$aMelville$$bAmerican Institute of Physics$$c2013
000188946 300__ $$a5
000188946 336__ $$aJournal Articles
000188946 520__ $$aThe effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O-2 was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO2-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface. (C) 2013 AIP Publishing LLC.
000188946 700__ $$aHashemi, Fatemeh Sadat Minaye$$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
000188946 700__ $$aThombare, Shruti$$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
000188946 700__ $$0243742$$aFontcuberta I. Morral, Anna$$g182447
000188946 700__ $$aBrongersma, Mark L.$$uStanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
000188946 700__ $$aMcintyre, Paul C.
000188946 773__ $$j102$$k25$$tApplied Physics Letters
000188946 8564_ $$s2152916$$uhttps://infoscience.epfl.ch/record/188946/files/HashemiAPL2013.pdf$$yn/a$$zn/a
000188946 909C0 $$0252277$$pLMSC$$xU11832
000188946 909CO $$ooai:infoscience.tind.io:188946$$pSTI$$particle
000188946 917Z8 $$x182447
000188946 937__ $$aEPFL-ARTICLE-188946
000188946 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000188946 980__ $$aARTICLE