000188644 001__ 188644
000188644 005__ 20190316235710.0
000188644 0247_ $$2doi$$a10.1109/TCSII.2013.2277958
000188644 02470 $$2ISI$$a000326110800012
000188644 037__ $$aARTICLE
000188644 245__ $$aPower-Gated Differential Logic Style Based on Double-Gate Controllable-Polarity Transistors
000188644 269__ $$a2013
000188644 260__ $$bIeee-Inst Electrical Electronics Engineers Inc$$c2013$$aPiscataway
000188644 300__ $$a5
000188644 336__ $$aJournal Articles
000188644 520__ $$aThis brief presents a novel power-gating technique for differential cascade voltage switch logic (DCVSL) based on double-gate (DG) controllable-polarity field-effect transistors (FETs). DG controllable-polarity FETs, commonly referred to as ambipolar transistors, are devices whose polarity is online reconfigurable by changing the second gate bias. In this brief, we exploit the online control of ambipolar device polarity to achieve intrinsically power-gated DCVSL circuits bypassing the use of series sleep transistors. We perform circuit-level simulations and comparisons at 22-nm technology node, considering silicon nanowire-based DG controllable-polarity FETs. Experimental results show that ambipolar DCVSL circuits power gated by the proposed technique have on average $6times$ smaller standby power with only $1.1times$ timing penalty with respect to their non-power-gated versions. As compared with unipolar FinFET-based realizations, our proposal is capable to reduce up to $1.9times$ the standby power consumption of a low-standby-power process and, at the same time, increase up to 10% the performance of a high-performance process.
000188644 6531_ $$aCircuit topology
000188644 6531_ $$adouble-gate FETS
000188644 6531_ $$alogic gates
000188644 6531_ $$apower dissipation
000188644 700__ $$aAmarù, Luca
000188644 700__ $$aGaillardon, Pierre-Emmanuel
000188644 700__ $$0245831$$g212096$$aZhang, Jian
000188644 700__ $$aDe Micheli, Giovanni$$g167918$$0240269
000188644 773__ $$j60$$tIEEE Transcations on Circuits and Systems II: Express Briefs$$k10$$q672-676
000188644 8564_ $$uhttps://infoscience.epfl.ch/record/188644/files/06588312.pdf$$zn/a$$s920005$$yn/a
000188644 909C0 $$xU11140$$0252283$$pLSI1
000188644 909CO $$particle$$qGLOBAL_SET$$ooai:infoscience.tind.io:188644$$pSTI$$pIC
000188644 917Z8 $$x112915
000188644 917Z8 $$x112915
000188644 937__ $$aEPFL-ARTICLE-188644
000188644 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000188644 980__ $$aARTICLE