Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel

We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETS.


Published in:
IEEE Transactions on Electron Devices, 60, 7, 2120-2127
Year:
2013
Publisher:
Piscataway, Ieee-Inst Electrical Electronics Engineers Inc
ISSN:
1557-9646
Keywords:
Laboratories:




 Record created 2013-08-07, last modified 2018-01-28


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