000187137 001__ 187137
000187137 005__ 20180317093853.0
000187137 0247_ $$2doi$$a10.1038/nmat3687
000187137 022__ $$a1476-4660
000187137 02470 $$2ISI$$a000323417600018
000187137 037__ $$aARTICLE
000187137 245__ $$aMobility engineering and a metal–insulator transition in monolayer MoS2
000187137 269__ $$a2013
000187137 260__ $$aLondon$$bNature Publishing Group$$c2013
000187137 300__ $$a6
000187137 336__ $$aJournal Articles
000187137 520__ $$aTwo-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising channel materials for field-effect transistors (FETs). The presence of a direct bandgap in monolayer MoS2 due to quantum-mechanical confinement allows room-temperature FETs with an on/off ratio exceeding 10(8). The presence of high-kappa dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. The dependence of mobility on temperature shows clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectric. At the same time, phonon scattering shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS2 due to strong electron-electron interactions. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying correlation effects in mesoscopic systems.
000187137 6531_ $$aMoS2
000187137 700__ $$0244322$$aRadisavljevic, Branimir$$g188494
000187137 700__ $$0240306$$aKis, Andras$$g133331
000187137 773__ $$tNature Materials
000187137 8564_ $$s612548$$uhttps://infoscience.epfl.ch/record/187137/files/NatureMat%20%282013%29%20Radisavljevic%20-%20Mobility%20engineering%20and%20metail-insulator%20transition%20in%20monolayer%20MoS2%20SI.pdf$$ySupplementary Information$$zSupplementary Information
000187137 8564_ $$s708162$$uhttps://infoscience.epfl.ch/record/187137/files/NatureMat%20%282013%29%20Radisavljevic%20-%20Mobility%20engineering%20and%20metail-insulator%20transition%20in%20monolayer%20MoS2_1.pdf$$yPublisher's version$$zPublisher's version
000187137 909CO $$ooai:infoscience.tind.io:187137$$particle$$pSTI
000187137 909C0 $$0252294$$pLANES$$xU11840
000187137 917Z8 $$x133331
000187137 917Z8 $$x133331
000187137 937__ $$aEPFL-ARTICLE-187137
000187137 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000187137 980__ $$aARTICLE