000185735 001__ 185735
000185735 005__ 20180317095049.0
000185735 0247_ $$2doi$$a10.1049/el.2012.3311
000185735 022__ $$a0013-5194
000185735 02470 $$2ISI$$a000314293800009
000185735 037__ $$aARTICLE
000185735 245__ $$aLow-cost, CMOS compatible, Ta2O5-based hemi-memristor for neuromorphic circuits
000185735 269__ $$a2012
000185735 260__ $$aHertford$$bInstitution of Engineering and Technology$$c2012
000185735 300__ $$a2
000185735 336__ $$aJournal Articles
000185735 520__ $$aIn the past, tantalum oxide devices have been used to create non-volatile digital memories, whilst neglecting the analogue memristive characteristics of such devices. In this Letter, it is shown that these devices can provide a low-cost, low-power solution for hemi-memristive devices, when used in their pre-formed, memristive region, whilst being fully CMOS compatible. Furthermore, measurements are presented from the devices that have been fabricated and it is shown that these devices do not require electroforming. Electroforming circuitry takes up valuable chip space at the transistor layers and significantly increases fabrication cost, since voltages as high as 12 V are required, which in turn requires extra masks to form high voltage devices and distribution circuits.
000185735 700__ $$aKyriakides, Evripides
000185735 700__ $$0242413$$aCarrara, Sandro$$g182237
000185735 700__ $$0240269$$aDe Micheli, Giovanni$$g167918
000185735 700__ $$aGeorgiou, Julius
000185735 773__ $$j48$$k23$$q1451-1452$$tElectronics Letters
000185735 909CO $$ooai:infoscience.tind.io:185735$$particle$$pSTI$$pIC
000185735 909C0 $$0252283$$pLSI1$$xU11140
000185735 917Z8 $$x112915
000185735 917Z8 $$x112915
000185735 937__ $$aEPFL-ARTICLE-185735
000185735 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000185735 980__ $$aARTICLE