A simplified GaN/AlGaN quantum cascade detector with an alloy extractor

We have demonstrated a GaN/AlGaN quantum cascade detector based on a simplified design of the extractor region relying on an AlGaN thick layer. The device grown by molecular beam epitaxy exhibits both TM-polarized intersubband absorption and photocurrent at room temperature at a peak wavelength of 1.87 mu m. Based on the measured absorption and responsivity, we estimate the transfer efficiency of photoelectrons to the next period to be around 62%. This simplified design is robust against thickness fluctuations in the extractor region and offers prospects for ultrafast detectors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772501]


Published in:
Applied Physics Letters, 101, 25
Year:
2012
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2013-03-28, last modified 2018-03-17


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