000185384 001__ 185384
000185384 005__ 20181203023042.0
000185384 0247_ $$2doi$$a10.3390/s130202093
000185384 022__ $$a1424-8220
000185384 02470 $$2ISI$$a000315403300042
000185384 037__ $$aARTICLE
000185384 245__ $$aComparative Study on the Performance of Five Different Hall Effect Devices
000185384 260__ $$bMdpi Ag$$c2013$$aBasel
000185384 269__ $$a2013
000185384 300__ $$a20
000185384 336__ $$aJournal Articles
000185384 520__ $$aFive different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
000185384 6531_ $$aHall Effect sensor design
000185384 6531_ $$aoffset
000185384 6531_ $$asensitivity
000185384 6531_ $$adevice polarization
000185384 6531_ $$a3D physical simulations
000185384 700__ $$0244586$$g184703$$aPaun, Maria-Alexandra
000185384 700__ $$0241224$$g106334$$aSallese, Jean-Michel
000185384 700__ $$aKayal, Maher$$g105540$$0240539
000185384 773__ $$j13$$tSensors$$k2$$q2093-2112
000185384 909C0 $$xU11978$$0252315$$pELAB
000185384 909C0 $$0252605$$pEDLAB
000185384 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:185384
000185384 917Z8 $$x105540
000185384 917Z8 $$x144315
000185384 937__ $$aEPFL-ARTICLE-185384
000185384 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000185384 980__ $$aARTICLE