Effect of the pn junction engineering on Si microwire-array solar cells

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.


Published in:
Physica Status Solidi A-Applications And Materials Science, 209, 8, 1588-1591
Year:
2012
Publisher:
Weinheim, Wiley-VCH Verlag Berlin
ISSN:
1862-6300
Keywords:
Laboratories:




 Record created 2013-02-27, last modified 2018-03-17

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