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research article
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity
Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing at external cavity lengths of up to 50 mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9 W is achieved for a 49 mm long cavity with output beam quality parameter M-2 not exceeding 1.1. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757758]
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Type
research article
Web of Science ID
WOS:000309603300020
Authors
Publication date
2012
Publisher
Published in
Volume
101
Issue
14
Article Number
141120
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
February 27, 2013