Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity

Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing at external cavity lengths of up to 50 mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9 W is achieved for a 49 mm long cavity with output beam quality parameter M-2 not exceeding 1.1. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757758]


Published in:
Applied Physics Letters, 101, 14
Year:
2012
Publisher:
Melville, Amer Inst Physics
ISSN:
0003-6951
Laboratories:




 Record created 2013-02-27, last modified 2018-10-07


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