000184055 001__ 184055
000184055 005__ 20181203022951.0
000184055 0247_ $$2doi$$a10.1109/Led.2012.2217474
000184055 022__ $$a0741-3106
000184055 02470 $$2ISI$$a000311808300021
000184055 037__ $$aARTICLE
000184055 245__ $$aExperimental Analysis of Lag Sources in Pinned Photodiodes
000184055 260__ $$bInstitute of Electrical and Electronics Engineers$$c2012$$aPiscataway
000184055 269__ $$a2012
000184055 300__ $$a3
000184055 336__ $$aJournal Articles
000184055 520__ $$aA measurement method is reported to distinguish the different mechanisms that lead to image lag in image sensors based on pinned photodiodes (PPDs). This new method can differentiate between the lag caused by a potential barrier or pocket and gate traps independently of charge spill-back. This is in contrast to usual lag characterization techniques, which only provide a quantitative measurement of the photocharge amount that is not transferred to the sense node in the frame of interest. The method reveals itself as useful to optimize pixels for high-speed and low-noise sensors based on PPDs.
000184055 6531_ $$aImage lag
000184055 6531_ $$aphotodiode lag
000184055 6531_ $$apotential barrier
000184055 6531_ $$apotential pocket
000184055 6531_ $$aspill-back
000184055 6531_ $$atransfer inefficiency
000184055 6531_ $$atraps
000184055 700__ $$uSwiss Ctr Elect & Microtechnol, CH-8048 Zurich, Switzerland$$aBonjour, Lysandre-Edouard
000184055 700__ $$uSwiss Ctr Elect & Microtechnol, CH-8048 Zurich, Switzerland$$aBlanc, Nicolas
000184055 700__ $$g105540$$aKayal, Maher$$0240539
000184055 773__ $$j33$$tIeee Electron Device Letters$$k12$$q1735-1737
000184055 909C0 $$xU11978$$0252315$$pELAB
000184055 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:184055
000184055 917Z8 $$x105540
000184055 937__ $$aEPFL-ARTICLE-184055
000184055 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000184055 980__ $$aARTICLE