000182401 001__ 182401
000182401 005__ 20180913061645.0
000182401 0247_ $$2doi$$a10.1109/ESSDERC.2012.6343358
000182401 037__ $$aCONF
000182401 245__ $$aTunnel FET with non-uniform gate capacitance for improved device and circuit level performance
000182401 269__ $$a2012
000182401 260__ $$bIEEE$$c2012
000182401 336__ $$aConference Papers
000182401 700__ $$0246495$$g200191$$aAlper, Cem
000182401 700__ $$0244760$$g174139$$aDe Michielis, Luca
000182401 700__ $$aDagtekin, Nilay
000182401 700__ $$0244761$$g181885$$aLattanzio, Livio
000182401 700__ $$aIonescu, Adrian M.$$g122431$$0241430
000182401 7112_ $$d17-21 09 2012$$cBordeaux, France$$aESSDERC 2012 - 42nd European Solid State Device Research Conference
000182401 773__ $$t2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)$$q161-164
000182401 909C0 $$xU10328$$0252177$$pNANOLAB
000182401 909CO $$pconf$$pSTI$$ooai:infoscience.tind.io:182401
000182401 917Z8 $$x200191
000182401 937__ $$aEPFL-CONF-182401
000182401 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000182401 980__ $$aCONF