000181864 001__ 181864
000181864 005__ 20190316235510.0
000181864 0247_ $$2doi$$a10.1109/TNANO.2012.2226747
000181864 022__ $$a1536-125X
000181864 02470 $$2ISI$$a000313424200006
000181864 037__ $$aARTICLE
000181864 245__ $$aDesign and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs
000181864 260__ $$bInstitute of Electrical and Electronics Engineers$$c2013$$aPiscataway
000181864 269__ $$a2013
000181864 300__ $$a11
000181864 336__ $$aJournal Articles
000181864 520__ $$aEmerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of building blocks for Field-Programmable Gate Arrays (FPGAs) using eNVMs. We propose an eNVM-based configuration point, a look-up table structure with reduced programming complexity and a high-performance switchbox arrangement. We show that these blocks yield an improvement in area and write time of up to 3x and 33x respectively vs. a regular Flash implementation. By integrating the designed blocks in a FPGA, we demonstrate an area and delay reduction of up to 28% and 34% respectively on a set of benchmark circuits. These reductions are due to the eNVM 3-D integration and to their low on-resistance state value. Finally, we survey many flavors of the technologies and we show that the best results in terms of area and delay are obtained with Pt/TiO2/Pt stack, while the lowest leakage power is achieved by InGeTe stack.
000181864 6531_ $$aprogrammable logic arrays
000181864 6531_ $$anonvolatile memory
000181864 6531_ $$aphase-change memory
000181864 6531_ $$aoxide memory
000181864 6531_ $$aRRAM
000181864 6531_ $$a3-D integration
000181864 700__ $$aGaillardon, Pierre-Emmanuel
000181864 700__ $$0242417$$g181895$$aSacchetto, Davide
000181864 700__ $$aBetti Beneventi, Giovanni
000181864 700__ $$0240267$$g169539$$aBen Jamaa, Haykel
000181864 700__ $$aPerniola, Luca
000181864 700__ $$aClermidy, Fabien
000181864 700__ $$aO'Connor, Ian
000181864 700__ $$g167918$$aDe Micheli, Giovanni$$0240269
000181864 773__ $$j12$$tIEEE Transactions on Nanotechnology$$k1$$q40-50
000181864 8564_ $$uhttps://infoscience.epfl.ch/record/181864/files/06341846.pdf$$zn/a$$s864690$$yn/a
000181864 909C0 $$xU10325$$0252051$$pLSM
000181864 909C0 $$0252283$$pLSI1$$xU11140
000181864 909CO $$qGLOBAL_SET$$pSTI$$pIC$$particle$$ooai:infoscience.tind.io:181864
000181864 917Z8 $$x112915
000181864 917Z8 $$x112915
000181864 917Z8 $$x112915
000181864 917Z8 $$x112915
000181864 917Z8 $$x148230
000181864 937__ $$aEPFL-ARTICLE-181864
000181864 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000181864 980__ $$aARTICLE