Streched organic transistors maintain mobility on flexible substrates

Two levels of aligned stencil lithography were used to fabricate pentacene thin film transistors on 12 mu m thick flexible polyimide substrates. Flexible transistors with 20 x 40 mu m(2) channels were electrically measured under strain up to 2.6%. After one stretching cycle, their average mobility was decreased by 21%, remaining constant after the next 100 cycles. In order to decouple ageing from stretching effects for long-term cycling, transistors with 10 x 20 mu m(2) channels were stretched up to 28,000 times and measured in the relaxed state, in parallel with reference samples left on the wafer. Their mobility decreased by 25% after the first cycle, while the consequent stretching did not affect the mobility more than natural ageing. (C) 2012 Elsevier B.V. All rights reserved.


Published in:
Microelectronic Engineering, 98, 508-511
Year:
2012
Publisher:
Amsterdam, Elsevier
ISSN:
0167-9317
Keywords:
Laboratories:


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 Record created 2012-09-27, last modified 2018-09-13

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