Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells

Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.


Published in:
Atomic Layer Deposition Applications 7, 41, 303-314
Presented at:
7th Symposium on Atomic Layer Deposition Applications/220th Meeting of the Electrochemical-Society (ECS), Boston, MA, Oct 10-12, 2011
Year:
2011
Publisher:
Pennington, Electrochemical Soc Inc, 65 S Main St, Pennington, Nj 08534-2839 Usa
ISBN:
978-1-60768-256-1
Keywords:
Laboratories:




 Record created 2012-08-17, last modified 2018-09-13


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