Small-signal amplifier based on single-layer MoS2

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738986]


Published in:
Applied Physics Letters, 101, 4, 043103
Year:
2012
Publisher:
Melville, American Institute of Physics
ISSN:
0003-6951
Keywords:
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 Record created 2012-07-24, last modified 2018-03-17

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