Combinatorial Chemical Vapor Deposition of Lithium Niobate Thin Films

Combinatorial lithium niobate deposition on 150 mm naturally oxidized silicon (100) wafers in a high-vacuum chemical vapor deposition reactor using Li(OBut) and Nb(OEt)4(dmae) is presented. The novel precursor supply system allows individual spatial control of precursors impinging rates on the substrate. This results in variations of the film properties in a single experiment at a certain substrate temperature due to the influence of different precursors flow rates and ratios. It efficiently leads to deposition conditions to achieve highly <001> oriented polycrystalline lithium niobate films.


Editor(s):
Swihart, M.
Barreca, D.
Adomaitis, R.
Worhoff, K.
Published in:
ECS Transactions, 25, 8, 1221-1228
Presented at:
EuroCVD 17/CVD 17, Vienna, Austria, October 4 - October 9, 2009
Year:
2009
Publisher:
ECS - The Electrochemical Society
Laboratories:




 Record created 2012-07-10, last modified 2018-03-18


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