Small slope micro/nano-electronic switches

This paper discusses three categories of small slope electronic switches: the Tunnel FET the IMOS and the NEM-FET which are expected to bring added value compared to CMOS by presenting an abrupt subthreshold slope, smaller than the physical limit, 60mV/decade, of the solid-state MOS transistor at room temperature. Recent results and future promises are reported.


Published in:
Cas 2007 International Semiconductor Conference, Vols 1 And 2, Proceedings, 397-402
Presented at:
International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007
Year:
2007
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-0847-4
Keywords:
Laboratories:




 Record created 2012-07-04, last modified 2018-09-13


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