Small slope micro/nano-electronic switches
Ionescu, Adrian M.; Boucart, Kathy; Moselund, Kirsten E.; Pott, Vincent; Tsamados, Dimitrios
2007

Abstract

This paper discusses three categories of small slope electronic switches: the Tunnel FET the IMOS and the NEM-FET which are expected to bring added value compared to CMOS by presenting an abrupt subthreshold slope, smaller than the physical limit, 60mV/decade, of the solid-state MOS transistor at room temperature. Recent results and future promises are reported.

Details

Title Small slope micro/nano-electronic switches
Author(s) Ionescu, Adrian M. ; Boucart, Kathy ; Moselund, Kirsten E. ; Pott, Vincent ; Tsamados, Dimitrios
Published in Cas 2007 International Semiconductor Conference
Pages 397-402
Conference International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007
Date 2007
Publisher Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN 978-1-4244-0847-4
Keywords
DOI https://doi.org/10.1109/SMICND.2007.4519743
Other identifier(s) View record in Web of Science
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Conference Papers
Work produced at EPFL
Published
Record creation date 2012-07-04

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