000179613 001__ 179613
000179613 005__ 20190228220049.0
000179613 0247_ $$2doi$$a10.1088/0741-3335/49/12B/S38
000179613 02470 $$2ISI$$a000252745900040
000179613 037__ $$aCONF
000179613 245__ $$aPlasma diagnostics as a tool for process optimization: the case of microcrystalline silicon deposition
000179613 269__ $$a2007
000179613 260__ $$c2007
000179613 336__ $$aConference Papers
000179613 520__ $$aProperties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, deposition efficiency and material quality of thin film deposition, such as for microcrystalline silicon, which is a key material for silicon thin film photovoltaic solar cells. This task can be performed by using Fourier transform infrared absorption spectroscopy or optical emission spectroscopy. This work compares these two techniques and shows their range of applicability and their limitations.
000179613 6531_ $$aOptical-Emission Spectroscopy
000179613 6531_ $$aSilane
000179613 6531_ $$aReactors
000179613 700__ $$aStrahm, B.
000179613 700__ $$aHowling, A. A.
000179613 700__ $$aHollenstein, Ch
000179613 7112_ $$a34th European-Physical-Society Conference on Plasma Physics$$cWarsaw, POLAND$$dJul 02-06, 2007
000179613 773__ $$j49$$qB411-B418$$tPlasma Physics And Controlled Fusion
000179613 909C0 $$pCRPP
000179613 909C0 $$0252028$$pSPC$$xU12272$$xU12268$$xU10558$$xU10635$$xU12266$$xU10636$$xU10137$$xU12270$$xU10557$$xU12273$$xU10559$$xU12271$$xU12269$$xU12267$$xU10136
000179613 909CO $$ooai:infoscience.tind.io:179613$$pconf$$pSB
000179613 917Z8 $$x112823
000179613 937__ $$aEPFL-CONF-179613
000179613 973__ $$aEPFL$$rNON-REVIEWED$$sPUBLISHED
000179613 980__ $$aCONF