Gate modulation in carbon nanotube field effect transistors-based NH3 gas sensors

Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. The reversibility of the CNTFET sensors is also found to be significantly improved under the appropriate positive gate voltages. In this study, an in-depth understanding of how the electrical properties of the CNTFETs are affected by NH3 gas is gained. (C) 2008 Elsevier B.V. All rights reserved.


Published in:
Sensors and Actuators B-Chemical, 132, 1, 191-195
Year:
2008
ISSN:
0925-4005
Keywords:
Laboratories:




 Record created 2012-06-29, last modified 2018-09-13


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