Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on the same wafer in a spectral range of 40 nm is demonstrated with these devices. This performance positions wafer-fused 1550 nm VCSELs as prime candidates for many applications in photonics, including air-space fiber-optic communications and WDM-PON as well as in spectroscopy and sensing.


Published in:
2011 13Th International Conference On Transparent Optical Networks (Icton), -
Presented at:
13th International Conference on Transparent Optical Networks (ICTON), Stockholm, SWEDEN, Jun 26-30, 2011
Year:
2011
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4577-0880-0
Keywords:
Laboratories:




 Record created 2012-06-25, last modified 2018-01-28


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