000178475 001__ 178475
000178475 005__ 20181203022745.0
000178475 0247_ $$2doi$$a10.1109/MMM.2011.942700
000178475 022__ $$a1527-3342
000178475 02470 $$2ISI$$a000300513200007
000178475 037__ $$aARTICLE
000178475 245__ $$aIntegration for All Configurations
000178475 260__ $$c2011
000178475 269__ $$a2011
000178475 336__ $$aJournal Articles
000178475 520__ $$aSince their discovery in 1991 [1], carbon nano-tubes (CNTs), have been considered among the most promising materials for logic nanodevices, interconnects and nanoelectromechanical systems (NEMS). They have remarkably unique mechanical (Youngs modulus up to 1TPa) and electrical (conductivity higher than Cu, for metallic nanotubes, and high mobility of carriers, for semiconducting nanotubes) properties. Another unique property that makes CNTs particularly attractive as via technology is their ability to carry current densities of over 108 A/cm2 [2], [3] without electromigration issues. Figure 1(a) summarizes some of their key electrical and mechanical figures of merit that make them interesting for the applications described in this work, and Figure 1(b) shows a CNT with an average diameter of 1.2 nm grown for via interconnects. © 2011 IEEE.
000178475 6531_ $$aCarbon
000178475 700__ $$0241430$$aIonescu, Adrian M.$$g122431
000178475 700__ $$aDijon, Jean
000178475 700__ $$aRobertson, John
000178475 773__ $$j12$$q42-50$$tIEEE Microwave Magazine
000178475 909C0 $$0252177$$pNANOLAB$$xU10328
000178475 909CO $$ooai:infoscience.tind.io:178475$$pSTI$$particle
000178475 917Z8 $$x198278
000178475 917Z8 $$x249835
000178475 937__ $$aEPFL-ARTICLE-178475
000178475 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000178475 980__ $$aARTICLE