000178196 001__ 178196
000178196 005__ 20190604054649.0
000178196 0247_ $$2doi$$a10.1021/nl301023r
000178196 022__ $$a1530-6984
000178196 02470 $$2ISI$$a000307211000012
000178196 037__ $$aARTICLE
000178196 245__ $$aSub-nanometer Ga2O3 tunnelling layer by atomic layer deposition to achieve 1.1V open-circuit potential in dye-sensitized solar cells
000178196 260__ $$bAmerican Chemical Society$$c2012$$aWashington
000178196 269__ $$a2012
000178196 300__ $$a7
000178196 336__ $$aJournal Articles
000178196 520__ $$aHerein, we present the first use of a gallium oxide tunnelling layer to significantly reduce electron recombination in dye-sensitized solar cells (DSC). The sub-nanometer coating is achieved using atomic layer deposition (ALD) and leading to a new DSC record open-circuit potential of 1.1V with state-of-the-art organic D-π-A sensitizer and cobalt redox mediator. After ALD of only a few angstroms of Ga2O3, the electron back reaction is reduced by more than an order of magnitude while charge collection efficiency and fill factor are increased by 30% and 15% respectively. The photo-generated exciton separation processes of electron injection into the TiO2 conduction band and the hole injection into the electrolyte are characterized in detail.
000178196 6531_ $$aAtomic layer deposition
000178196 6531_ $$adye-sensitized solar cell
000178196 6531_ $$agallium oxide
000178196 6531_ $$atunnelling layer
000178196 6531_ $$aelectron recombination
000178196 700__ $$0243915$$g192134$$aChandiran, Aravind Kumar
000178196 700__ $$0244216$$g187324$$aTétreault, Nicolas
000178196 700__ $$0240190$$g107384$$aHumphry-Baker, Robin
000178196 700__ $$0244232$$g205239$$aKessler, Florian
000178196 700__ $$0243911$$g177332$$aBaranoff, Etienne
000178196 700__ $$aYi, Chenyi$$g201491$$0244228
000178196 700__ $$aNazeeruddin, Mohammad Khaja$$g105958$$0240422
000178196 700__ $$aGraetzel, Michael$$g105292$$0240191
000178196 773__ $$q3941-3947$$k8$$j12$$tNano Letters
000178196 8564_ $$uhttp://pubs.acs.org/doi/abs/10.1021/nl301023r$$zURL
000178196 909C0 $$xU10101$$0252060$$pLPI
000178196 909CO $$ooai:infoscience.tind.io:178196$$qGLOBAL_SET$$pSB$$particle
000178196 917Z8 $$x192134
000178196 937__ $$aEPFL-ARTICLE-178196
000178196 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000178196 980__ $$aARTICLE