@article{Chandiran:178196,
      title = {Sub-nanometer Ga2O3 tunnelling layer by atomic layer  deposition to achieve 1.1V open-circuit potential in  dye-sensitized solar cells},
      author = {Chandiran, Aravind Kumar and Tétreault, Nicolas and  Humphry-Baker, Robin and Kessler, Florian and Baranoff,  Etienne and Yi, Chenyi and Nazeeruddin, Mohammad Khaja and  Graetzel, Michael},
      publisher = {American Chemical Society},
      journal = {Nano Letters},
      address = {Washington},
      number = {8},
      volume = {12},
      pages = {7. 3941–3947},
      year = {2012},
      abstract = {Herein, we present the first use of a gallium oxide  tunnelling layer to significantly reduce electron  recombination in dye-sensitized solar cells (DSC). The  sub-nanometer coating is achieved using atomic layer  deposition (ALD) and leading to a new DSC record  open-circuit potential of 1.1V with state-of-the-art  organic D-π-A sensitizer and cobalt redox mediator. After  ALD of only a few angstroms of Ga2O3, the electron back  reaction is reduced by more than an order of magnitude  while charge collection efficiency and fill factor are  increased by 30% and 15% respectively. The photo-generated  exciton separation processes of electron injection into the  TiO2 conduction band and the hole injection into the  electrolyte are characterized in detail.},
      url = {http://infoscience.epfl.ch/record/178196},
      doi = {10.1021/nl301023r},
}