000178151 001__ 178151
000178151 005__ 20180913061329.0
000178151 0247_ $$2doi$$a10.1109/JETCAS.2011.2162159
000178151 022__ $$a21563357
000178151 037__ $$aARTICLE
000178151 245__ $$aBenchmarking of standard-cell based memories in the sub-VT domain in 65-nm CMOS technology
000178151 269__ $$a2011
000178151 260__ $$c2011
000178151 336__ $$aJournal Articles
000178151 520__ $$aIn this paper, standard-cell based memories (SCMs) are proposed as an alternative to full-custom sub-VT SRAM macros for ultra-low-power systems requiring small memory blocks. The energy per memory access as well as the maximum achievable throughput in the sub-VT domain of various SCM architectures are evaluated by means of a gate-level sub-VT characterization model, building on data extracted from fully placed, routed, and back-annotated netlists. The reliable operation at the energy-minimum voltage of the various SCM architectures in a 65-nm CMOS technology considering within-die process parameter variations is demonstrated by means of Monte Carlo circuit simulation. Finally, the energy per memory access, the achievable throughput, and the area of the best SCM architecture are compared to recent sub-VT SRAM designs.
000178151 6531_ $$aEmbedded memory
000178151 6531_ $$aLow-power
000178151 6531_ $$aLatch array
000178151 6531_ $$aSub-VT operation
000178151 6531_ $$aReliability
000178151 6531_ $$aProcess parameter variation
000178151 6531_ $$aFlip-flop array
000178151 700__ $$0245487$$aMeinerzhagen, Pascal Andreas$$g160137
000178151 700__ $$aSherazi, S. M. Y.
000178151 700__ $$0245488$$aBurg, Andreas Peter$$g194090
000178151 700__ $$aRodrigues, J. N.
000178151 773__ $$j1$$k2$$q173-182$$tIEEE Journal on Emerging and Selected Topics in Circuits and Systems
000178151 8564_ $$s5410860$$uhttps://infoscience.epfl.ch/record/178151/files/scm.pdf$$yPostprint$$zPostprint
000178151 909C0 $$0252398$$pTCL$$xU12395
000178151 909CO $$ooai:infoscience.tind.io:178151$$pSTI$$particle
000178151 917Z8 $$x160137
000178151 917Z8 $$x102085
000178151 917Z8 $$x160137
000178151 937__ $$aEPFL-ARTICLE-178151
000178151 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000178151 980__ $$aARTICLE