Single-photon Avalanche Diodes in sub-100nm Standard CMOS Technologies
Karami, M. A.; Yoon, H. J.; Charbon, E.
2011

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Abstract

Single-photon avalanche diodes (SPADs) are evaluated in two sub-100nm CMOS technologies. Several geometries are implemented, whereas premature edge breakdown (PEB) prevention is achieved with n-well rings. The octagonal SPADs are implemented in 90nm and 65nm standard CMOS technologies. Full characterization of SPAD performance is carried out as a function of bias and temperature. To the best of our knowledge, this is the first report of SPAD in any 65nm CMOS technology.

Details

Title Single-photon Avalanche Diodes in sub-100nm Standard CMOS Technologies
Author(s) Karami, M. A. ; Yoon, H. J. ; Charbon, E.
Published in Proc. Intl. Image Sensor Workshop (IISW)
Conference Intl. Image Sensor Workshop (IISW), June, 2011
Date 2011
Keywords
Laboratories AQUA
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > AQUA - Quantum Architecture Group
Scientific production and competences > EPFL Partners > Neuchâtel Campus > AQUA - Quantum Architecture Group
Peer-reviewed publications
Work outside EPFL
Conference Papers
Published
Record creation date 2012-06-12

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