Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer that has a thickness of 2 nm and efficiently isolates the ZnO nanowire from the top-gate electrodes. Inverters fabricated on a single ZnO nanowire operate with frequencies up to 1 MHz. Compared with metal-semiconductor field-effect transistors, in which the isolation of the gate electrode from the carrier channel relies solely on the depletion layer in the semiconductor, the self-assembled monolayer dielectric leads to a reduction of the gate current by more than 3 orders of magnitude.


Published in:
Nano Letters, 11, 5309-5315
Year:
2011
Keywords:
Laboratories:




 Record created 2012-06-12, last modified 2018-03-17


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