On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.


Published in:
I
Presented at:
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),, Jan 16-18 2012
Year:
2012
Publisher:
New York, Ieee
ISBN:
978-1-4577-1316-3
Keywords:
Laboratories:




 Record created 2012-05-15, last modified 2018-01-28

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