1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics. (C)2012 Optical Society of America


Published in:
Optics Express, 20, 8, 9046
Year:
2012
Publisher:
Optical Society of America
ISSN:
1094-4087
Keywords:
Laboratories:




 Record created 2012-05-02, last modified 2018-03-17


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