000175489 001__ 175489
000175489 005__ 20181001181841.0
000175489 022__ $$a0018-9383
000175489 02470 $$2ISI$$a000300580600013
000175489 0247_ $$2doi$$a10.1109/TED.2011.2181389
000175489 037__ $$aARTICLE
000175489 245__ $$aModeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects
000175489 269__ $$a2012
000175489 260__ $$bInstitute of Electrical and Electronics Engineers$$c2012
000175489 336__ $$aJournal Articles
000175489 520__ $$aMultifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of- equilibrium quasi-Fermi levels in proximity of the Si/SiO2 inter- face has been studied in detail.
000175489 6531_ $$acharge pumping
000175489 6531_ $$acharge trapping
000175489 6531_ $$amultiphonon-assisted model
000175489 6531_ $$aoxide degradation
000175489 700__ $$0242442$$aGaretto, Davide$$g181878
000175489 700__ $$aRandriamihaja, Yoann Mamy
000175489 700__ $$aRideau, Denis
000175489 700__ $$aZaka, Alban
000175489 700__ $$0241347$$aSchmid, Alexandre$$g108571
000175489 700__ $$0240162$$aLeblebici, Yusuf$$g112194
000175489 700__ $$aJaouen, Hervé
000175489 773__ $$j59$$k3$$q621-630$$tIEEE Transactions on Electron Devices
000175489 8564_ $$s991809$$uhttps://infoscience.epfl.ch/record/175489/files/06140953.pdf$$yn/a$$zn/a
000175489 909C0 $$0252051$$pLSM$$xU10325
000175489 909CO $$ooai:infoscience.tind.io:175489$$pSTI$$particle$$qGLOBAL_SET
000175489 917Z8 $$x112194
000175489 937__ $$aEPFL-ARTICLE-175489
000175489 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000175489 980__ $$aARTICLE