Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of- equilibrium quasi-Fermi levels in proximity of the Si/SiO2 inter- face has been studied in detail.


Published in:
IEEE Transactions on Electron Devices, 59, 3, 621-630
Year:
2012
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Keywords:
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 Record created 2012-03-08, last modified 2018-06-24

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