Ultra low power: Emerging devices and their benefits for integrated circuits

In this paper we analyze and discuss the characteristics and expected benefits of some emerging device categories for ultra low power integrated circuits. First, we focus on two categories of sub-thermal subthreshold swing switches Tunnel FETs and Negative Capacitance (NC) FETs and evaluate their potential advantages for digital and analog design, compared to CMOS. Second, we investigate the combined low power and novel integrated functionality in some hybrid Nano-Electro-Mechanical (NEM) devices: the Resonant Body (RB) Fin FET for nW time reference ICs and dense arrays of Suspended Body (SB) Double Gate (DG) Carbon Nanotube (CNT) FET for low power analog/RF and integrated sensor arrays.


Published in:
2011 International Electron Devices Meeting, 16.1.1-16.1.4
Presented at:
2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 5-7 December 2011
Year:
2011
Publisher:
IEEE
Laboratories:




 Record created 2012-03-06, last modified 2018-09-13


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