Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs


Published in:
The 35th international conference on Micro Nano Engineering
Presented at:
MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009
Year:
2009
Keywords:
Laboratories:




 Record created 2012-03-01, last modified 2018-03-17


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