000175139 001__ 175139
000175139 005__ 20180317093517.0
000175139 0247_ $$2doi$$a10.1111/j.1551-2916.2011.04861.x
000175139 022__ $$a0002-7820
000175139 02470 $$2ISI$$a000297848100002
000175139 037__ $$aARTICLE
000175139 041__ $$aeng
000175139 245__ $$aLarge Electric-Field Induced Strain in BiFeO3 Ceramics
000175139 269__ $$a2011
000175139 260__ $$bWiley-Blackwell$$c2011
000175139 336__ $$aJournal Articles
000175139 520__ $$aLarge bipolar strain of up to 0.36% (peak-to-peak value) was measured in BiFeO3 ceramics at low frequency (0.1 Hz) and large amplitude (140 kV/cm) of the driving field. This strain is comparable to that achievable in highly efficient morphotropic phase boundary (MPB) Pb-based perovskite ceramics, such as Pb(Zr,Ti)O-3 and Pb(Mg,Nb)O-3-PbTiO3. The strain showed a strong dependence on the field frequency, and is probably largely associated with domain switching involving predominantly non-180 degrees domain walls. In addition, application of an electric field of low frequency rearranges the defects, which act as pinning centers for the domain walls. The resulting depinning of the domain walls leads to a more efficient switching and, consequently, to an increased response. The large strain reported here suggests that the domain-wall motion in BiFeO3 may be as large as in classical lead-based ferroelectrics. We hope that this finding might further stimulate the search of new lead-free MPB compositions based on BiFeO3.
000175139 6531_ $$aSoft Pzt Ceramics
000175139 6531_ $$aPiezoelectric Properties
000175139 6531_ $$aTitanate Ceramics
000175139 6531_ $$aThin-Films
000175139 6531_ $$aMicrostructure
000175139 6531_ $$aTemperature
000175139 6531_ $$aDependence
000175139 6531_ $$aPlzt
000175139 700__ $$aRojac, Tadej
000175139 700__ $$aKosec, Marija
000175139 700__ $$0240215$$aDamjanovic, Dragan$$g104860
000175139 773__ $$j94$$k12$$q4108-4111$$tJournal of the American Ceramic Society
000175139 8564_ $$s197215$$uhttps://infoscience.epfl.ch/record/175139/files/489Rojac.pdf$$yn/a$$zn/a
000175139 909CO $$ooai:infoscience.tind.io:175139$$particle$$pSTI
000175139 909C0 $$0252012$$pLC$$xU10334
000175139 917Z8 $$x104860
000175139 917Z8 $$x104860
000175139 917Z8 $$x128933
000175139 937__ $$aEPFL-ARTICLE-175139
000175139 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000175139 980__ $$aARTICLE