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Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth
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Advantages and remaining issues of state-of-the-ar[...]
-
Chichibu, S. F.
et al
main
fichier(s):
SST27(2012)024008_m-InGaN
version 1
SST27(2012)024008_m-InGaN.pdf
[1.91 MB]
27 Jan 2018, 13:35
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