Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output and transfer characteristics, as well as the impact of back gate bias, silicon thickness and gate length on the device behavior are evaluated. Near ideal average subthreshold slope (SSavg ~ 12 mV/dec over 6 decades of current) and Ion/Ioff >; 10^8 at Vd = Vg = 0.5 V figures of merit are obtained, due to the OFF-ON binary transition which leads to the abrupt onset of the band-to-band tunneling inside the silicon channel. Drive current (Ion) in the EHBTFET is 3× higher that in traditional all-Si Tunnel FET but below 0.1 μA/μm.


Published in:
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 259-262
Presented at:
ESSDERC 2011 - 41st European Solid State Device Research Conference, Helsinki, Finland, September 12-16, 2011
Year:
2011
Publisher:
IEEE
Keywords:
Laboratories:




 Record created 2012-01-19, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)