Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
We propose a novel Tunnel field-effect transistor (TFET) concept called the electron-hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron-hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p-i-n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output and transfer characteristics, as well as the impact of back gate bias, silicon thickness and gate length on the device behavior are evaluated. Near ideal average subthreshold slope (SSavg 12 mV/dec over 6 decades of current) and Ion/Ioff >; 10^8 at Vd = Vg = 0.5 V figures of merit are obtained, due to the OFF-ON binary transition which leads to the abrupt onset of the band-to-band tunneling inside the silicon channel. Drive current (Ion) in the EHBTFET is 3× higher that in traditional all-Si Tunnel FET but below 0.1 μA/μm.
Keywords: Computational modeling , Films , Junctions , Logic gates , Silicon , Solids , Tunneling , elemental semiconductors , field effect transistors , p-i-n diodes , silicon , tunnel transistors , tunnelling , 2D numerical simulations , EHBTFET , OFF-ON binary transition , Si , TFET concept , back gate bias , band-to-band tunneling , bias-induced electron-hole bilayer , carrier tunneling , device behavior , device principle , drive currents , electron-hole bilayer TFET , electron-hole bilayer tunnel FET , gate length , ideal average subthreshold slope , improved ON current , lateral p-i-n junction TFET , silicon channel , silicon thickness , steep subthreshold swing , transfer characteristics , tunnel field-effect transistor concept, FP7 STEEPER
Record created on 2012-01-19, modified on 2016-08-09