Tunneling path impact on semi-classical numerical simulations of TFET devices
De Michielis, Luca; Iellina, Matteo; Palestri, Pierpaolo; Ionescu, Adrian M.; Selmi, Luca
2011

Abstract

In this work a non-local band-to-band tunnelling model has been implemented into a full-band Monte Carlo simulator. Two different approaches for the choice of the tunnelling path have been implemented and their impact on the transfer characteristics of different Tunnel FET structures is investigated. In both the SOI and the DG TFET architectures we have simulated, up to 1 order of magnitude of underestimation in the current and up to 15% of difference in the value of the Subthreshold Slope can be found according to the choice of the tunnelling path. © 2011 IEEE.

Details

Title Tunneling path impact on semi-classical numerical simulations of TFET devices
Author(s) De Michielis, Luca ; Iellina, Matteo ; Palestri, Pierpaolo ; Ionescu, Adrian M. ; Selmi, Luca
Published in Ulis 2011 Ultimate Integration on Silicon
Pages 1-4
Conference 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011
Date 2011
Publisher IEEE
Keywords
DOI https://doi.org/10.1109/ULIS.2011.5758002
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2012-01-19

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