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Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
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Local stressors to accommodate 1.2 to 5.6 GPa unia[...]
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Najmzadeh, Mohammad
et al
main
file(s):
Najmzadeh-ISDRS2011
version 1
Najmzadeh-ISDRS2011.pdf
[829.15 KB]
27 Jan 2018, 13:52
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