Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
Najmzadeh, Mohammad; Bouvet, Didier; Grabinski, Wladyslaw; Ionescu, Mihai Adrian
2011

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Abstract

In this paper, we demonstrate the integration of local oxidation and metal-gate strain technologies to induce 3.3%/5.6 GPa uniaxial tensile strain/stress in 2 μm long suspended Si nanowire MOSFETs, the highest process-based stress record in MOSFETs until now, by elastic local buckling. Significant stress level modulation in the channel from 1.2 to 5.6 GPa on a single wafer is demonstrated for the first time by varying the NW width. The GAA Si NW MOSFET with 5.6 GPa uniaxial tensile stress is characterized and the electron mobility enhancement is reported.

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Title Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
Author(s) Najmzadeh, Mohammad ; Bouvet, Didier ; Grabinski, Wladyslaw ; Ionescu, Mihai Adrian
Published in Semiconductor Device Research Symposium (ISDRS), 2011 International
Pages 1-2
Conference International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011
Date 2011
ISBN 978-1-4577-1755-0
Keywords
DOI https://doi.org/10.1109/ISDRS.2011.6135148
Additional link URL
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Conference Papers
Work produced at EPFL
Published
Record creation date 2012-01-13

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