In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.
Titre
Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
Publié dans
MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest
Série
Proceedings: IEEE Micro Electro Mechanical Systems
Pages
112-115
Présenté à
23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010
Date
2010
Editeur
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, NJ 08855-1331 USA
Date de création de la notice
2012-01-09