Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.


Published in:
MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest, 112-115
Presented at:
23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010
Year:
2010
Publisher:
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, NJ 08855-1331 USA
Laboratories:




 Record created 2012-01-09, last modified 2018-03-17


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