Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
Arun, A.; Goffman, M. F.; Grogg, D.; Filoramo, A.; Campidelli, S.; Derycke, V.; Idda, T.; Salet, P.; Ionescu, A. M.
2010

Abstract

In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.

Details

Title Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
Author(s) Arun, A. ; Goffman, M. F. ; Grogg, D. ; Filoramo, A. ; Campidelli, S. ; Derycke, V. ; Idda, T. ; Salet, P. ; Ionescu, A. M.
Published in MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest
Series Proceedings: IEEE Micro Electro Mechanical Systems
Pages 112-115
Conference 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010
Date 2010
Publisher IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, NJ 08855-1331 USA
DOI https://doi.org/10.1109/MEMSYS.2010.5442552
Other identifier(s) View record in Web of Science
Laboratories NANOLAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Conference Papers
Work produced at EPFL
Published
Record creation date 2012-01-09

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