Electron trapping in substoichiometric germanium oxide

Model structures of substoichiometric germanium oxide generated by ab initio molecular dynamics reveal a rich variety of bonding configurations, including threefold coordinated Ge and O atoms which correspond to valence alternation pairs. A sizable fraction of twofold Ge atoms carrying unoccupied dangling bonds is also found. The present structures are prone to electron capture. The electrons are trapped in additionally formed Ge-Ge bonds. The associated defect levels fall within the Ge band gap and could explain the poor performance of n-type Ge devices. (C) 2010 American Institute of Physics. [doi : 10.1063/1.3486175]


Published in:
Applied Physics Letters, 97, -
Year:
2010
Publisher:
American Institute of Physics
ISSN:
0003-6951
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-03-17


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