Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom cladding. Such devices are compared to standard InGaN based lasers looking at threshold current density, electrical characteristics, and far-field emission. Threshold current densities of 4 kA/cm(2) and slope efficiencies of similar to 0.6 W/A (for uncoated facets) have been achieved in AlInN containing devices. Lower mode leakage in the substrate is highlighted by a better transversal far-field pattern resulting in an improved beam quality. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489108]


Published in:
Applied Physics Letters, 97, -
Year:
2010
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-03-17


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)