205-GHz (Al,In)N/GaN HEMTs

We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of f(T) = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V-GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.


Published in:
Ieee Electron Device Letters, 31, 957-959
Year:
2010
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0741-3106
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-12-03


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