000172053 001__ 172053
000172053 005__ 20181203022543.0
000172053 0247_ $$2doi$$a10.1063/1.3514095
000172053 02470 $$2ISI$$a000285474100049
000172053 037__ $$aARTICLE
000172053 245__ $$aStudy of the epitaxial relationships between III-nitrides and M-plane sapphire
000172053 269__ $$a2010
000172053 260__ $$c2010
000172053 336__ $$aJournal Articles
000172053 520__ $$aGaN films epitaxially-grown on M-sapphire may have different orientations, either nonpolar and semipolar. In this paper, the different epitaxial relationships are investigated in details thanks to transmission electron microscopy. It is shown that these relationships drastically depend on the nitridation conditions. Mechanisms explaining the different epitaxial relationships are proposed. These mechanisms take into account the formation of a nitridation layer, the lattice mismatches between the growing films, and the substrate, and the surface energies. It is, moreover, shown that the difference of symmetries between the M-sapphire surface and the epitaxial films leads to the formation of growth twins for the (10 (1) over bar0) and (10 (1) over bar(3) over bar) orientations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3514095]
000172053 6531_ $$aLight-Emitting-Diodes
000172053 6531_ $$aTransmission Electron-Microscopy
000172053 6531_ $$aSemipolar Gan Templates
000172053 6531_ $$aVapor-Phase Epitaxy
000172053 6531_ $$aFilms
000172053 6531_ $$aNonpolar
000172053 6531_ $$aGrowth
000172053 6531_ $$aNitridation
000172053 6531_ $$aCrystals
000172053 6531_ $$aSurfaces
000172053 700__ $$uCNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France$$aVennegues, Philippe
000172053 700__ $$uEcole Polytech Fed Lausanne, Inst Quantum Elect & Photon, Lab Adv Semicond Photon & Elect, CH-1015 Lausanne, Switzerland$$aZhu, Tiankai
000172053 700__ $$uEcole Polytech Fed Lausanne, Inst Quantum Elect & Photon, Lab Adv Semicond Photon & Elect, CH-1015 Lausanne, Switzerland$$aMartin, Denis
000172053 700__ $$g161577$$uEcole Polytech Fed Lausanne, Inst Quantum Elect & Photon, Lab Adv Semicond Photon & Elect, CH-1015 Lausanne, Switzerland$$aGrandjean, Nicolas$$0244550
000172053 773__ $$j108$$tJournal Of Applied Physics$$q-
000172053 909C0 $$xU10946$$0252312$$pLASPE
000172053 909CO $$pSB$$particle$$ooai:infoscience.tind.io:172053
000172053 937__ $$aEPFL-ARTICLE-172053
000172053 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000172053 980__ $$aARTICLE