A systematic study of niobium oxide deposition using niobium tetraethoxy-dimethyl-amino-ethoxide (Nb(OEt)(4)(dmae)) precursor is presented. The deposition process was conducted in a high-vacuum chemical vapor deposition machine with precursor flux gradient capability. An efficient optimization of the deposition process was achieved and both mass-transport- and chemical-reaction-limited regimes were identified.
Titre
Efficient optimization of high vacuum chemical vapor deposition of niobium oxide on full wafer scale
Publié dans
Fundamentals And Technology Of Multifunctional Oxide Thin Films (Symposium G, Emrs 2009 Spring Meeting)
Série
IOP Conference Series-Materials Science and Engineering
Volume
8
Pages
012026
Présenté à
Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009
Date
2010
Editeur
Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England
Date de création de la notice
2011-12-16