Efficient optimization of high vacuum chemical vapor deposition of niobium oxide on full wafer scale

A systematic study of niobium oxide deposition using niobium tetraethoxy-dimethyl-amino-ethoxide (Nb(OEt)(4)(dmae)) precursor is presented. The deposition process was conducted in a high-vacuum chemical vapor deposition machine with precursor flux gradient capability. An efficient optimization of the deposition process was achieved and both mass-transport- and chemical-reaction-limited regimes were identified.


Published in:
Fundamentals And Technology Of Multifunctional Oxide Thin Films (Symposium G, Emrs 2009 Spring Meeting), 8, -
Presented at:
Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009
Year:
2010
Publisher:
Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-03-18


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)