000171995 001__ 171995
000171995 005__ 20180913060955.0
000171995 020__ $$a978-1-4244-7419-6
000171995 02470 $$2ISI$$a000287997300042
000171995 037__ $$aCONF
000171995 245__ $$aResonant-Body Fin-FETs with sub-nW power consumption
000171995 269__ $$a2010
000171995 260__ $$bIeee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa$$c2010
000171995 336__ $$aConference Papers
000171995 490__ $$aInternational Electron Devices Meeting
000171995 520__ $$aThis paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance frequencies from 25 MHz to 80 MHz with quality factors of the order of 3000 and motional resistances of the order of tens of kOhm are demonstrated with a mixer mode measurement technique, dedicated to ultra-scaled resonators. The power consumption of the active resonators can be reduced in weak inversion of the RB-FinFET well below 1nW, which is a record value compared to any prior active NEM resonator.
000171995 6531_ $$aTransistor
000171995 700__ $$aBartsch, Sebastian T.
000171995 700__ $$aGrogg, Daniel
000171995 700__ $$aLovera, Andrea
000171995 700__ $$aTsamados, Dimitrios
000171995 700__ $$aAyoez, Suat
000171995 700__ $$0241430$$aIonescu, Adrian M.$$g122431
000171995 7112_ $$aInternational Electron Devices Meeting (IEDM)$$cSan Francisco, CA$$dDec 06-08, 2010
000171995 773__ $$q-$$t2010 International Electron Devices Meeting - Technical Digest
000171995 8564_ $$s1159731$$uhttps://infoscience.epfl.ch/record/171995/files/05703318.pdf$$yn/a$$zn/a
000171995 909C0 $$0252177$$pNANOLAB$$xU10328
000171995 909CO $$ooai:infoscience.tind.io:171995$$pconf$$pSTI
000171995 917Z8 $$x198278
000171995 917Z8 $$x192059
000171995 937__ $$aEPFL-CONF-171995
000171995 973__ $$aEPFL$$rNON-REVIEWED$$sPUBLISHED
000171995 980__ $$aCONF